Book Details
Integrated Microelectronic Devices : Physics and Modeling
A modern take on microelectronic device engineering
Microelectronics is a 50-year-old engineering discipline still undergoing rapid evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor device physics that is relevant to modern nanoelectronics. The central goal is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics. Emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In addition to this focus, the concepts learned here are highly applicable in other device contexts.
This text is suitable for a one-semester junior or senior-level course by selecting the front sections of selected chapters (e.g. 1-9). It can also be used in a two-semester senior-level or a graduate-level course by taking advantage of the more advanced sections.
<p>1 Electrons, Photons, and Phonons</p>
<p>2 Carrier Statistics in Equilibrium</p>
<p>3 Carrier Generation and Recombination</p>
<p>4 Carrier Drift and Diffusion</p>
<p>5 Carrier Flow</p>
<p>6 PN Junction Diode</p>
<p>7 Schottky Diode and Ohmic Contact
<p>8 The Si Surface and the Metal-Oxide-Semiconductor Structure<p>
<p>9 The "Long"Metal-Oxide-Semiconductor Field-Effect Transistor</p>
<p>10 The "Short"Metal-Oxide-Semiconductor Field-Effect Transistor</p>
<p>11 The Bipolar Junction Transistor</p>
<p>A Table of Fundamental Physical Constants</p>
<p>B Table of Important Material Parameters of Si,GaAs, and SiO2 at 300 k</p>
<p>C Table of Acronyms</p>
<p>D Table of Taylor Series Expansions</p>
<p>E Analytical Expressions for Important Material Parameters of Si at 300 K</p>
<p>F Solution to Selected Problems</p>
<p>Index</p>
<p>
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